Wafer Warpage Measurement System

The WD4000 Wafer Warp Measurement System utilizes high-precision spectral confocal sensing technology and optical interference bidirectional scanning technology to perform non-contact scanning and create 3D mapping, enabling the measurement of parameters such as wafer thickness, TTV, LTV, Bow, Warp, TIR, SORI, and other surface topography characteristics. Through non-contact measurement, the three-dimensional topography of the wafer is reconstructed. The powerful measurement and analysis software stably calculates wafer thickness, TTV, BOW, and WARP, ensuring efficient measurement while effectively preventing scratches and defects on the wafer.

Measurement Functions
1. Thickness Measurement Module: Thickness, TTV (Total Thickness Variation), LTV, BOW, WARP, TIR, SORI, flatness, etc.;
2. Microscopic Topography Measurement Module: Roughness, flatness, micro-geometric profile, area, volume, etc.
3. Data Processing Functions: Provides four major modules—position adjustment, correction, filtering, and extraction. Position adjustment includes functions such as image leveling and mirroring; correction includes spatial filtering, retouching, spike denoising, etc.; filtering includes form removal, standard filtering, spectral filtering, etc.; extraction includes functions such as region extraction and profile extraction.
4. Analysis Functions: Provides five major analysis capabilities—geometric profile analysis, roughness analysis, structural analysis, frequency analysis, and functional analysis. Geometric profile analysis includes step height, distance, angle, curvature measurements, and straightness and roundness form tolerance evaluations; roughness analysis includes full parameters such as line roughness per ISO 4287, areal roughness per ISO 25178, and flatness per ISO 12781; structural analysis includes pore volume and trough analysis.

The WD4000 Wafer Warp Measurement System can measure wafers made of various materials, including gallium arsenide, gallium nitride, gallium phosphide, germanium, indium phosphide, lithium niobate, sapphire, silicon, silicon carbide, and glass. It is compatible with different materials and roughness levels, capable of measuring highly warped wafers, and provides more accurate measurements of both sides of the wafer.